|
|
- 微波双栅MOSFET场效应管
MOS Feldeffekt-Transistoren
| 型号
|
最大限度参数
|
特性
(测试温度=25'C) |
Package
|
| Tetrode
四管脚外形 |
VDS
(V) |
ID
(mA) |
Ptot
(mw) |
Gps
(dB) |
F
(dB) |
VDS
(V) |
ID
(mA) |
f
(MHz) |
gfs
(mS) |
| BF
930 |
12
|
40
|
200
|
29
|
0.6
|
8
|
15
|
200
|
42
|
SOT-143
|
| BF
994S |
20
|
30
|
200
|
25
|
1
|
15
|
10
|
200
|
18
|
SOT-143
|
| BF
995 |
20
|
30
|
200
|
23
|
1.1
|
15
|
10
|
200
|
17
|
SOT-143
|
| BF
996S |
20
|
30
|
200
|
18
|
1.8
|
15y
|
10
|
800
|
18
|
SOT-143
|
| BF
997 |
20
|
30
|
200
|
25
|
1
|
15
|
10
|
200
|
18
|
SOT-143
|
| BF
998 |
12
|
30
|
200
|
20
|
1
|
8
|
10
|
800
|
24
|
SOT-143
|
| BF
1005 |
12
|
30
|
200
|
19
|
1.4
|
5
|
10
|
800
|
23.5
|
SOT-143
|
| BF
1009 |
16
|
10
|
200
|
20
|
1
|
9
|
13
|
800
|
24
|
SOT-143
|
| BF
1012 |
16
|
10
|
200
|
20
|
1
|
12
|
10
|
800
|
24
|
SOT-143
|
- 双栅砷化镓场效应管
Dual-Gate GaAsFETs
| 型号
|
最大限度参数 |
特性 (测试温度=25'C)
|
Package
|
| VDS (V) |
VG1S (V) |
VG2S (V) |
ID (mA) |
IDS(mA) |
F(dB) |
Gps(dB) |
f (GHz) |
| CF
739
|
10 |
6 |
6 |
80 |
10 |
1.8 |
17 |
1.75 |
SOT-143 |
|
|
|
